Title: New strategy for designing orangish-redemitting phosphor via oxygen-vacancy-induced electronic localization
Author(s): Wei, Y (Wei, Yi); Xing, GC (Xing, Gongcheng); Liu, K (Liu, Kang); Li, GG (Li, Guogang); Dang, PP (Dang, Peipei); Liang, SS (Liang, Sisi); Liu, M (Liu, Min); Cheng, ZY (Cheng, Ziyong); Jin, DY (Jin, Dayong); Lin, J (Lin, Jun)
Addresses:Wei Yi, China Univ Geosci, Fac Mat Sci & Chem, Engn Res Ctr Nanogeomat, Minist Educ, 388 Lumo Rd, Wuhan 430074, Hubei, Peoples R China
Source: LIGHT-SCIENCE & APPLICATIONS, Volume: 8, Article Number: 15
Published: JAN 30 2019
Abstract: Phosphor-converted white-light-emitting diodes (pc-WLED) have been extensively employed as solid-state lighting sources, which have a very important role in people's daily lives. However, due to the scarcity of the red component, it is difficult to realize warm white light efficiently. Hence, red-emitting phosphors are urgently required for improving the illumination quality. In this work, we develop a novel orangish-red La4GeO8:Bi3+ phosphor, the emission peak of which is located at 600 nm under near-ultraviolet (n-UV) light excitation. The full width at half maximum (fwhm) is 103 nm, the internal quantum efficiency (IQE) exceeds 88%, and the external quantum efficiency (EQE) is 69%. According to Rietveld refinement analysis and density functional theory (DFT) calculations, Bi3+ ions randomly occupy all La sites in orthorhombic La4GeO8. Importantly, the oxygen-vacancy-induced electronic localization around the Bi3+ ions is the main reason for the highly efficient orangish-red luminescence. These results provide a new perspective and insight from the local electron structure for designing inorganic phosphor materials that realize the unique luminescence performance of Bi3+ ions.
Full Text from Publisher: https://www.nature.com/articles/s41377-019-0126-1